Microelectromechanical Systems Webinar Series: Wafer-Scale Heterogeneous Integration XOI for Power, Photonic and Acoustic Devices (Video)

Heterogeneous integration is a crucial development direction in the post-Moore era. Its essence lies in integrating power, photonic, radio frequency (RF), and other semiconductor thin films onto functional substrates, thus achieving complementary advantages between materials and ultimately realizing transformative improvements in the performance of power, photonic and RF devices. Here, we will present a wafer-scale integration technique, termed ion-cutting technique, to obtain functional thin films on insulator (X-on-insulator, XOI) with ultra-high crystallinity, thus achieving breakthrough performance in power, photonic, and RF filter devices. Given the potential of the XOI materials, such as Lithium Niobate on insulator (LNOI), Lithium Tantalate on insulator (LTOI), Silicon Carbide on insulator (SiCOI) and Indium phosphide on insulator (InPOI), we will discuss some advanced microfabrication methods and versatile photonic devices, establishing a path towards the practical realization of monolithic photonic system. For instance, SiCOI can serve as a favorable platform for large-scale quantum system due to its excellent color center characteristic. In addition to the integrated photonic devices, thin-film LiNbO3 and LiTaO3 are also widely employed in high-performance RF surface acoustic wave (SAW) filters of the wireless communication systems. A single-crystal piezoelectric film is integrated on the different substrates, which mainly plays the role of energy leakage suppression, frequency improvement, and heat dissipation. RF filters based on the XOI platform will have great application potential in the future 5G/6G communications.