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High Drive and Low Leakage Current MBC FET with Channel Thickness 1.2 nm/0.6 nm

Xiaohe Huang, Chunsen Liu, Zhaowu Tang, Senfeng Zeng, Liwei Liu, Xiang Hou, Huawei Chen, Jiayi Li, Yu-Gang Jiang, David Wei Zhang, Peng Zhou

DOI
10.17023/84j7-es45
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    Length: 00:19:08

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