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High Speed Memory Operation in Channel Last, Back Gated Ferroelectric Transistors

Abhishek Sharma, Brian Doyle, Hui Jae Yoo, I-Cheng Tung, Jack Kavalieros, Matthew Metz, Miriam Reshotko, Prashant Majhi, Tobias Brown-Heft, Yu-Jin Chen, Van Le

DOI
10.17023/jnaq-9g95
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