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256-1963 - IEEE Test Procedure for Semiconductor Diodes | IEEE Standard | IEEE Xplore

256-1963 - IEEE Test Procedure for Semiconductor Diodes

Status: inactive - Withdrawn

Abstract:

This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes, For the purpose of this Standard, a sem...Show More
Scope:This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes. For the purpose of this Standard, a sem...Show More

Abstract:

This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes, For the purpose of this Standard, a semiconductor diode is defined as: "A semiconductor device having two terminals and exhibiting a nonlinear voltage-current characteristic ; in more restricted usage, a semiconductor device which has the asymmetrical voltage-current characteristic exemplified by a single p-n junction." Methods of test are described for static, small-signal and pulse parameters. Many of the terms considered herein have been set down in AIEE and IRE Standards, particularly in 60 IRE 28.S1 and AIEE No. 425.
Scope:
This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes. For the purpose of this Standard, a semiconductor diode is defined1 as: A semiconductor device having two terminals and exhibiting a nonlinear voltage--current characteristic; in more restricted usage, a semiconductor device which has the asymmetrical voltage--current characteristic exemplified by a single p-n junction. Methods of test are described for static, small-signal and pulse parameters. Many of the terms considered herein have been set down in AI E E and IRE Standards, particularly in 60 IRE 28.SH and AI EE No. 4252.
Date of Publication: 20 December 1963
Electronic ISBN:978-1-5044-0227-9
Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=7385413

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